Photodiode, APD, 1310/1550 nm, 2.5 Gb/s, Front-illuminated, Chip

The JDSU 2.5 Gb/s front-illuminated avalanche photodiode (FI-APD) is designed for Gigabit Passive Optical Networks (GPON) that enable data transmissions for fiber-to-the-home (FTTH) offerings. As a result of their internal gain, APDs can significantly enhance receiver sensitivity relative to a standard PI photodiode.

This FI-APD uses JDSU proprietary APD designs known for their superior reliability. The dark current at 95% of breakdown voltage is typically in the subnano-amp range. It has an optical window of 53 μm, and a remote metal bond pad of 60 μm. The FI-APD has an operating temperature range from -40 °C to 85 °C, and the sensitivity with a low noise TIA can reach -33 dBm.

All APD chips come from wafers that have JDSU qualifed. Qualification includes burn-in and functional testing of a sample quantity of chips from each wafer..Each die shipped is tested at 25 °C.

Front illuminated device for ease of assembly,with 53 micron diameter active region

• -40 to 85 °C operating temperature range
• -33 dBm typical sensitivity (TIA dependent)
• Better than -6 dBm overload performance (TIA dependent)
• Uses proven, highly reliable JDSU APD designs

• GPON
• SONET OC-48
• Ethernet

• Fully qualified for Telcordia GR-468-CORE
• RoHS compliant