850 nm 4.25 G GaAs PIN Die (PDF, 0.14 MB)
The JDSU single die 850 nm 4.25 Gbps GaAs PIN is designed for high-speed optical data communication applications. The backside mounting surface is electrically isolated from the device electrodes for simplified assembly. The PIN is designed for datacom applications using 850 nm multi-mode 50/125 μm or 62.5/125 μm fiber.
Key Features
- Topside connections for both contacts
- Anti-refl ective coating for 850 nm
- Monolithic insulating mounting surface
- Data rates from 622 Mbps to 4.25 Gbps
- Custom physical confi guration and performance specifi cation tolerances are available
Benefits
- Excellent performance
- Small die dimensions allow flexible assembly options
